Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy-Reference-Cited by-同舟云学术

Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

Published:2011-08 Issue:1 Volume:62 Page:142-145
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Fu Yi-Keng,Lu Yu-Hsuan,Jiang Ren-Hao,Chen Bo-Chun,Fang Yen-Hsiang,Xuan Rong,Su Yan-Kuin,Lin Chia-Feng,Chen Jebb-Fang

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

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2. InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode;Yamada;Jpn J Appl Phys,2002

3. Phosphor-conversion white light emitting diodes using InGaN near-ultraviolet chip;Narukawa;Jpn J Appl Phys,2002

4. Influence of the barrier composition on the light output of InGaN multiple-quantum-well ultraviolet light emitting diodes;Knauer;Proc SPIE,2007

5. High power pure-blue semiconductor lasers;Goto;Proc SPIE,2007

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1. Highly efficient near ultraviolet LEDs using InGaN/GaN/AlxGa1-xN/GaN multiple quantum wells at high temperature on sapphire substrate;Materials Science in Semiconductor Processing;2023-03

2. Characterization of quaternary AlInGaN films obtained by incorporating Al into InGaN film with the RF reactive magnetron sputtering technology;Journal of Materials Science: Materials in Electronics;2016-08-10

3. Performance Enhancement of Ultraviolet Light-Emitting Diodes by Incorporating a Thin Al(In)GaN Interlayer in Multiquantum-Well Region;IEEE Journal of Quantum Electronics;2015-07