An analytical compact model for Schottky-barrier double gate MOSFETs-Reference-Cited by-同舟云学术

An analytical compact model for Schottky-barrier double gate MOSFETs

Published:2011-10 Issue:1 Volume:64 Page:78-84
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Balaguer M.,Iñiguez B.,Roldán J.B.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

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4. Vandooren A. Multiple gates and strained films for SOI MOSFETs. EUROSOI – second workshop of the thematic network on silicon on insulator technology, devices and circuits, Grenoble; March 8–10th, 2006.

5. Multiple-gate SOI MOSFETs;Colinge;Solid-State Electron,2004

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