Strained MOSFETs on ordered SiGe dots-Reference-Cited by-同舟云学术

Strained MOSFETs on ordered SiGe dots

Published:2011-11 Issue: Volume:65-66 Page:81-87
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Cervenka Johann,Kosina Hans,Selberherr Siegfried,Zhang Jianjun,Hrauda Nina,Stangl Julian,Bauer Guenther,Vastola Guglielmo,Marzegalli Anna,Montalenti Francesco,Miglio Leo

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

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2. Site-controlled and size-homogeneous Ge islands on prepatterned Si(001) substrates;Zhong;Appl Phys Lett,2004

3. SiGe growth on patterned Si(001) substrates: surface evolution and evidence of modified island coarsening;Zhang;Appl Phys Lett,2007

4. Local equilibrium and global relaxation of strained SiGe/Si(001) layers;Stoffel;Phys Rev B,2006

5. X-ray investigation of buried SiGe islands for devices with strain-enhanced mobility;Hrauda;J Vac Sci Technol B,2009

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