SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2802555
Reference22 articles.
1. Structural properties of self-organized semiconductor nanostructures
2. Strained SiGe islands on Si(001): Evolution, motion, dissolution, and plastic relaxation
3. Self-assembled Ge/Si dots for faster field-effect transistors
4. Strained n-Channel Transistors With Silicon Source and Drain Regions and Embedded Silicon/Germanium as Strain-Transfer Structure
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2. Precisely ordered Ge quantum dots on a patterned Si microring for enhanced light-emission;Nanotechnology;2020-07-06
3. Site‐Controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling;Advanced Materials;2020-02-27
4. Controllable growth of GeSi nanowires on trench patterned Si(001) substrate;Acta Physica Sinica;2020
5. Single-Shot Readout of Hole Spins in Ge;Nano Letters;2018-10-25
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