Characteristics of current distribution by designed electrode patterns for high power ThinGaN LED-Reference-Cited by-同舟云学术

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Characteristics of current distribution by designed electrode patterns for high power ThinGaN LED

Published:2010-11 Issue:11 Volume:54 Page:1438-1443
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Tu S.H.,Chen J.C.,Hwu F.S.,Sheu G.J.,Lin F.L.,Kuo S.Y.,Chang J.Y.,Lee C.C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Solid-state light sources getting smart;Schubert;Science,2005

2. Introduction to solid state lighting;Zukauskas,2002

3. Thermal management design from chip to package for high power InGaN/sapphire LEDs applications;Horng;Electrochem Solid-State Lett,2009

4. Damage-free separation of GaN thin films from sapphire substrates;Wong;Appl Phys Lett,1998

5. Optical process for liftoff group III-nitride films;Kelly;Phys Stat Sol,1997

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