Improvement of the positive bias stability of a-IGZO TFTs by the HCN treatment-Reference-Cited by-同舟云学术

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Improvement of the positive bias stability of a-IGZO TFTs by the HCN treatment

Published:2016-12 Issue: Volume:126 Page:87-91
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Kim Myeong-Ho,Choi Myung-Jea,Kimura Katsuya,Kobayashi Hikaru,Choi Duck-Kyun

Funder

National Research Foundation of Korea

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Characteristics of short-channel amorphous In-Ga-Zn-O thin film transistors and their circuit performance as a load inverter

2. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

3. Present status of amorphous In–Ga–Zn–O thin-film transistors

4. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

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1. Bias stress stabilities of PMMA-passivated indium-gallium-zinc-oxide thin-film transistors after 100 °C steam exposure;Solid-State Electronics;2024-05

2. Atomic-Layer-Deposited Ultrathin InAlZnO FETs-Based 2T0C DRAM Cells With Long Data Retention and Multilevel Storage;IEEE Transactions on Electron Devices;2024-04

3. Enhancements of electrical properties and positive bias instability in self-aligned top-gate a-IGZO TFTs by hydrogen incorporation;Semiconductor Science and Technology;2024-03-25

4. Mobility Enhancement of BCE-Type Amorphous InGaZnO TFTs Using Triple-Layer Channels;IEEE Transactions on Electron Devices;2023-08

5. Turn-around of threshold voltage shift in amorphous InGaZnO TFT under positive bias illumination stress;Solid-State Electronics;2023-03

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