Small-signal analysis of high-performance p- and n-type SOI SB-MOSFETs with dopant segregation

Author:

Urban C.,Emam M.,Sandow C.,Zhao Q.T.,Fox A.,Mantl S.,Raskin J.-P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. International Technology Roadmap for Semiconductors, USA; 2008 [2008 update]. .

2. Kedzierski J, Xuan P, Anderson EH, Bokor J. Complementary silicide source/drain thin-body MOSFETs for the 20nm gate length regime. In: IEDM tech dig; 2000. p. 57–60.

3. Low temperature measurements of Schottky-barrier SOI-MOSFETs with dopant segregation;Zhang;Electron Lett,2005

4. Fermi-level depinning for low Schottky source/drain transistors;Connelly;Appl Phys Lett,2006

5. Ghoneim H, Knoch J, Riel H, Webb D, Björk MT, Karg S, et al. Interface engineering for the suppression of ambipolar behavior in Schottky-barrier MOSFETs. In: 10th International conference on ultimate integration of silicon, ULIS 2009; 2009. p. 69–72.

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