Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT-Reference-Cited by-同舟云学术

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Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT

Published:2018-04 Issue: Volume:142 Page:8-13
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Malik Amit,Sharma Chandan,Laishram Robert,Bag Rajesh Kumar,Rawal Dipendra Singh,Vinayak Seema,Sharma Rajesh Kumar

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy;Smorchkova;J Appl Phys,1999

2. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures;Ambacher;J Appl Phys,2000

3. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs;Vetury;IEEE Trans Electron Dev,2001

4. AlGaN/GaN HEMTs—An Overview of Device Operation and Applications;Mishra;Proc IEEE,2002

5. Kink effect in AlGaN/GaN HEMTs induced by drain and gate pumping;Wang;IEEE Electron Dev Lett,2011

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1. Quantum coupling and self-heating impacts on threshold voltages of GaN metal–insulator-semiconductor high-electron-mobility transistors;Results in Physics;2024-09

2. Suppression of Total Dose Effects on the Performance of InAlGaN/GaN MIS-HEMT via Field Plate Implementation;IEEE Transactions on Device and Materials Reliability;2024-09

3. Impact of high-temperature operating lifetime tests on the stability of 0.15 μm AlGaN/GaN HEMTs: A temperature-dependent analysis;Microelectronics Reliability;2023-11

4. Physical insights into the reliability of sunken source connected field plate GaN HEMTs for mm-wave applications;Microelectronics Reliability;2023-09

5. Fabrication and characterization of a high-electron-mobility transistor using a sputtering buffer layer on a Si substrate;Journal of Crystal Growth;2023-08

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