Author:
Geynet B.,Chevalier P.,Brossard F.,Vandelle B.,Schwartzmann T.,Buczko M.,Avenier G.,Dutartre D.,Dambrine G.,Danneville F.,Chantre A.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference5 articles.
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4. Meister TF et al. SiGe base bipolar technology with 74GHz fmax and 11psec gate delay. In: IEDM Tech Dig; 1995. p. 739–42.
5. H. Rücker et al. SiGe BiCMOS technology with 3.0ps gate delay. In: IEDM Tech Dig; 2007. p. 651–4.
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