Collector optimization for tradeoff between breakdown voltage and cut-off frequency in SiGe HBT
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/11/114402/pdf
Reference16 articles.
1. Design and Optimization of Superjunction Collectors for Use in High-Speed SiGe HBTs
2. Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology
3. A comparison of linear handset power amplifiers in different bipolar technologies
4. SiGe HBT Without Selectively Implanted Collector (SIC) Exhibiting$f_max = hbox310 hboxGHz$and$hboxBV_rm CEO = hbox2 hboxV$
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1. Composition-Dependent Phonon and Thermodynamic Characteristics of C-Based XxY1−xC (X, Y ≡ Si, Ge, Sn) Alloys;Inorganics;2024-03-30
2. Segregations and desorptions of Ge atoms in nanocomposite Si 1− x Ge x films during high-temperature annealing;Chinese Physics B;2017-12
3. A technique for simultaneously improving the product of cutoff frequency–breakdown voltage and thermal stability of SOI SiGe HBT;Chinese Physics B;2016-11-29
4. Effect of lateral structure parameters of SiGe HBTs on synthesized active inductors;Chinese Physics B;2016-03
5. Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment;Chinese Physics B;2015-08
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