Formation of ultra-shallow base with high boron-doping concentration for high-performance SiGe HBTs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. High-performance self-aligned SiGeC HBT with selectively grown Si/sub 1-x-yGe/sub x/C/sub y/ base by UHV/CVD
2. Oda K, Miura M, Shimamoto H, Washio K. ICSI-5: International conference on silicon epitaxy and heterostructures 2007; May 2007. p. 85.
3. Chemical Vapor Deposition of Epitaxial Silicon‐Germanium from Silane and Germane: II . In Situ Boron, Arsenic, and Phosphorus Doping
4. Atomic layer doping of SiGe – fundamentals and device applications
5. Selective epitaxial growth of boron- and phosphorus-doped Si and SiGe for raised sources and drains
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