On the C-V characteristics of nanoscale strained gate-all-around Si/SiGe MOSFETs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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1. Recent Developments and Challenges in Strained Junctionless MOSFETs: A Review;2023 International Conference on Computational Intelligence and Sustainable Engineering Solutions (CISES);2023-04-28
2. Degradation Behavior and Mechanism of SiC Power MOSFETs Under Repetitive Transmission Line Pulse Stress;IEEE Journal of Emerging and Selected Topics in Power Electronics;2022-12
3. Strained Junctionless MOSFETs: A Brief Review;2022 International Conference on Fourth Industrial Revolution Based Technology and Practices (ICFIRTP);2022-11-23
4. Degradation Behavior and Defect Analysis for SiC Power MOSFETs Based on Low-Frequency Noise Under Repetitive Power-Cycling Stress;IEEE Transactions on Electron Devices;2021-02
5. State of the Art and Future Perspectives in Advanced CMOS Technology;Nanomaterials;2020-08-07
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