Light triggered 4H–SiC thyristors with an etched guard ring assisted JTE-Reference-Cited by-同舟云学术

Light triggered 4H–SiC thyristors with an etched guard ring assisted JTE

Published:2012-07 Issue: Volume:73 Page:32-36
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Dheilly Nicolas,Planson Dominique,Pâques Gontran,Scharnholz Sigo

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

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3. Evaluation of Si and SiC SGTOs for high-action army applications;O’Brien;IEEE Trans Magn,2009

4. 9kV, 1cm2 SiC gate turn-off thyristors;Agarwal;Mater Sci Forum,2010

5. 3kV 4H–SiC Thyristors for pulsed power applications;Elasser;Mater Sci Forum,2010

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1. Edge Termination Structures for 3.3 kV 4H-SiC Devices;2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2020-09-23

2. An Improved Composite JTE Termination Technique for Ultrahigh Voltage 4H-SiC Power Devices;2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS);2019-11

3. Shortening turn-on delay of SiC light triggered thyristor by 7-shaped thin n-base doping profile;Chinese Physics B;2018-10