Mobility behavior and models for fully depleted nanocrystalline ZnO thin film transistors-Reference-Cited by-同舟云学术

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Mobility behavior and models for fully depleted nanocrystalline ZnO thin film transistors

Published:2013-12 Issue: Volume:90 Page:134-142
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Chang Sung-Jae,Cheralathan Muthupandian,Bawedin Maryline,Iniguez Benjamin,Bayraktaroglu Burhan,Lee Jong-Hyun,Lee Jung-Hee,Cristoloveanu Sorin

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference38 articles.

1. ZnO nanocrystalline high performance thin film transistors;Bayraktaroglu;Int J High Speed Electron Syst,2011

2. Growth of p-type zinc oxide films by chemical vapor deposition;Minegishi;Jpn J Appl Phys,1997

3. P-type electrical conduction in ZnO thin films by Ga and N Co doping;Joseph;Jpn J Appl Phys,1999

4. Transparent thin film transistors using ZnO as an active channel layer and their electrical properties;Masuda;J Appl Phys,2003

5. Transparent amorphous indium zinc oxide thin-film transistors fabricated at room temperature;Song;Appl Phys Lett,2007

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1. Polycrystalline InGaO Thin‐Film Transistors with Coplanar Structure Exhibiting Average Mobility of ≈78 cm ² V ^‐1 s ^‐1 and Excellent Stability for Replacing Current Poly‐Si Thin‐Film Transistors for Organic Light‐Emitting Diode Displays;Small Methods;2022-07-25

2. Extremely Stable, High Performance Gd and Li Alloyed ZnO Thin Film Transistor by Spray Pyrolysis;Advanced Electronic Materials;2020-11-05

3. 19.5 μW ultra‐low‐power 13.56 MHz RFID tag based on transparent zinc‐oxide thin‐film transistors;IET Circuits, Devices & Systems;2020-07-10

4. A New Integration-Based Procedure to Extract the Threshold Voltage, the Mobility Enhancement Factor, and the Series Resistance of Thin-Film MOSFETs;IEEE Transactions on Electron Devices;2019-07

5. Improved Structural and Electrical Properties of ZnO-Based Thin Film Transistors by Using Pulsed KrF Excimer Laser Irradiation;Journal of Electronic Materials;2019-02-26

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