Normally-off GaN MOSFETs on insulating substrate-Reference-Cited by-同舟云学术

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Normally-off GaN MOSFETs on insulating substrate

Published:2013-12 Issue: Volume:90 Page:79-85
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Kim Dong-Seok,Im Ki-Sik,Kim Ki-Won,Kang Hee-Sung,Kim Do-Kywn,Chang Sung-Jae,Bae Youngho,Hahm Sung-Ho,Cristoloveanu Sorin,Lee Jung-Hee

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference36 articles.

1. Ikeda N, Li J, Yoshida S. In: Proceedings of International Symposium Power Semiconductor Devices ICs, vol. 369; 2004.

2. Enhancement-Mode AlGaN/AlN/GaN High Electron Mobility Transistor with Low On-State Resistance and High Breakdown Voltage

3. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

4. Normally Off AlGaN/GaN Metal–2DEG Tunnel-Junction Field-Effect Transistors

5. Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

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1. Enhancement of device performance in β-Ga2O3 Schottky barrier diodes with tetramethylammonium hydroxide treatment;Colloids and Surfaces A: Physicochemical and Engineering Aspects;2024-07

2. Suppression of current dispersion in AlGaN/GaN MISHFETs with in-situ AlN passivation layer;Solid-State Electronics;2021-04

3. Improvement of dry etch-induced surface roughness of single crystalline β-Ga2O3 using post-wet chemical treatments;Applied Surface Science;2020-03

4. Selective Ohmic Contact Formation on Schottky Type AlGaN/GaN UV Sensors Using Local Breakdown;IEEE Sensors Journal;2019-04-15

5. GaN-Based Ultraviolet Passive Pixel Sensor on Silicon (111) Substrate;Sensors;2019-03-01

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