SiGe:C HBT transit time analysis based on hydrodynamic modeling using doping, composition and strained dependent SiGe:C carriers mobility and relaxation time

Author:

Ramirez-Garcia E.,Michaillat M.,Aniel F.,Zerounian N.,Enciso-Aguilar M.,Rideau D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference38 articles.

1. SiGe radio frequency ICs for low power portable communication;Long;Proc IEEE,2005

2. SiGe technology requirements for millimeter-wave applications;Wennekers;(IEEE) Proc. BCTM,2004

3. The state-of-the-art in simulation for optimization of SiGe-HBTs;Palankovski;Appl Surf Sci,2004

4. 2-D analysis of device parasitics for 800/1000GHz fT /fMAX SiGe HBT;Shi;(IEEE) Proc BCTM,2005

5. Comparative study of electron transit times evaluated by DD, HD and MC device simulator for a SiGe HBT;Jungemann;IEEE Trans Electron Dev,2001

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