Influence of temperature on transit times and microwave noise performances of SiGe HBT-Reference-Cited by-同舟云学术

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Influence of temperature on transit times and microwave noise performances of SiGe HBT

Published:2016-02-17 Issue:3 Volume:31 Page:035020
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Diaz-Albarran L M,Ramirez-Garcia E,Zerounian N,Aniel F,Rodriguez-Mendez L M,Valdez-Perez D,Galaz-Larios M C,Enciso-Aguilar M A

Funder

Instituto Politécnico Nacional

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/31/i=3/a=035020/pdf

Reference30 articles.

1. A 0.8 THz $f_{\rm MAX}$ SiGe HBT Operating at 4.3 K

2. Hybrid LNAs with SiGe HBTs on 7th generation BiCMOS process

3. SiGe HBT X-Band LNAs for Ultra-Low-Noise Cryogenic Receivers

4. Low-Power Very Low-Noise Cryogenic SiGe IF Amplifiers for Terahertz Mixer Receivers

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