Author:
Yu W.,Zhang B.,Zhao Q.T.,Hartmann J.-M.,Buca D.,Nichau A.,Lupták R.,Lopes J.M.,Lenk S.,Luysberg M.,Bourdelle K.K.,Wang X.,Mantl S.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Comprehensive study on low-frequency noise and mobility in Si and SiGe pMOSFETs with high-/spl kappa/ gate dielectrics and TiN gate
2. Oh J, Ok I, Kang C-Y, Jamil M, Lee S-H, Loh W-Y, et al., In: 2009 Symposium on VLSI Technology Digest of Technical Papers, vol. 238, 2009.
3. Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs
4. High‐mobilityp‐channel metal‐oxide‐semiconductor field‐effect transistor on strained Si
5. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys
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19 articles.
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