Qualitative analysis on gain compression in power MOS transistor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Electrothermal simulations of high-power SOI vertical DMOS transistors with lateral drain contacts under unclamped inductive switching test;Pinardi;Solid State Electron,2004
2. Performance of lateral SOI–MOS static induction transistors for RF power applications;Yano;Solid State Electron,2005
3. A numerical study of field plate configurations in RF SOI–LDMOS transistors;Cortés;Solid State Electron,2006
4. Simulation and modeling of the substrate contribution to the output resistance for RF-LDMOS power transistors;Ankarcrona;Solid State Electron,2004
5. Gallium nitride: the promise of high RF power and low microwave noise performance in S and I band;Oxley;Solid State Electron,2004
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