Electron trapping effects in C- and Fe-doped GaN and AlGaN-Reference-Cited by-同舟云学术

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Electron trapping effects in C- and Fe-doped GaN and AlGaN

Published:2005-10 Issue:10 Volume:49 Page:1662-1668
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lopatiuk Olena,Osinsky Andrei,Dabiran Amir,Gartsman Konstantin,Feldman Isai,Chernyak Leonid

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference43 articles.

1. Amphoteric properties of substitutional carbon impurity in GaN and AlN

2. Substitutional and interstitial carbon in wurtzite GaN

3. p-Type Doping of Cubic GaN by Carbon

4. CCl4 doping of GaN grown by metalorganic molecular beam epitaxy

5. Armitage R, Yang Q, Feick H, Park Y,Weber ER. Proceedings of the MRS Spring Meeting 2002;719:F1.2.

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1. High Current Density and Low Ron Quaternary InAlGaN MIS-HEMT on Si for Power Applications;ECS Journal of Solid State Science and Technology;2023-07-01

2. Effects on RF Performance for AlGaN/GaN HEMT on Si Substrate with AlGaN Buffer Engineering;ECS Journal of Solid State Science and Technology;2023-03-01

3. Drain-bias dependence of low-frequency Y22 signals for Fe-related GaN traps in GaN HEMTs with different Fe doping concentrations;Solid-State Electronics;2023-03

4. A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer;Materials;2022-01-18

5. Determination of hole diffusion length in n-GaN;Journal of Physics: Conference Series;2021-12-01

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