Impact of gate dielectric constant variation on tunnel field-effect transistors (TFETs)
Author:
Funder
MSIP
MOTIE/KSRC
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. Tunnel field-effect transistors as energy-efficient electronic switches;Ionescu;Nature,2011
2. Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60mV/dec;Choi;IEEE Electron Device Lett,2007
3. Low-subthreshold-swing tunnel transistors;Qin;IEEE Electron Device Lett,2006
4. Double-gate tunnel FET with high-κ gate dielectric;Boucart;IEEE Trans Electron Dev,2007
5. Effect of the post-deposition annealing on electrical characteristics of MIS structures with HfO2/SiO2 gate dielectric stacks;Taube;Mater Sci Eng B – Solid,2012
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1. Design and Optimization of a Heterojunction (Ge/Si) Vertical-Tunnel Field Effect Transistor (HV-TFET) with a Doped Bar for Low-Power Applications;Journal of Electronic Materials;2024-05-24
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3. Analysis of the Dual Gate Vertical TFET Performance with a Dual Gate Oxide Material Stacking;2023 IEEE 3rd International Conference on Applied Electromagnetics, Signal Processing, & Communication (AESPC);2023-11-24
4. Tunnel field effect transistor device structures: A comprehensive review;Materials Today: Proceedings;2023
5. Impact of source doping profile on the performance of CNT TFETs and MOSFETs: design aspects for fabrication tolerance;Semiconductor Science and Technology;2021-06-11
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