Impact of source doping profile on the performance of CNT TFETs and MOSFETs: design aspects for fabrication tolerance
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/ac04c6/pdf
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1. Enhancement of device characteristics of CNT-TFET: Role of electrostatic doping and work function engineering;Ain Shams Engineering Journal;2023-03
2. Impact of gate misalignment on the performance of CNTFET: TFET vs MOSFET;Alexandria Engineering Journal;2023-02
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