Analyzing the current crowding effect induced by oxygen adsorption of amorphous InGaZnO thin film transistor by capacitance–voltage measurements-Reference-Cited by-同舟云学术

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Analyzing the current crowding effect induced by oxygen adsorption of amorphous InGaZnO thin film transistor by capacitance–voltage measurements

Published:2012-03 Issue: Volume:69 Page:11-13
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Huang Sheng-Yao,Chang Ting-Chang,Chen Min-Chen,Jian Fu-Yen,Chen Shih-Cheng,Chen Te-Chih,Jheng Jing-Ling,Lou Mei-Jheng,Yeh (Huang) Fon-Shan

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Instability in threshold voltage and subthreshold behavior in Hf–In–Zn–O thin film transistors induced by bias-and light-stress

2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

3. Zinc tin oxide based driver for highly transparent active matrix OLED displays

4. Amorphous In–Ga–Zn–O Thin Film Transistor Current-Scaling Pixel Electrode Circuit for Active-Matrix Organic Light-Emitting Displays

5. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

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