High-performance vertically stacked bottom-gate and top-gate polycrystalline silicon thin-film transistors for three-dimensional integrated circuits-Reference-Cited by-同舟云学术

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High-performance vertically stacked bottom-gate and top-gate polycrystalline silicon thin-film transistors for three-dimensional integrated circuits

Published:2012-11 Issue: Volume:77 Page:26-30
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lee I-Che,Tsai Tsung-Che,Tsai Chun-Chien,Yang Po-Yu,Wang Chao-Lung,Cheng Huang-Chung

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Semiconductor device scaling: physics, transport, and the role of nanowires;Ferry;Proc ICONN,2006

2. Stacked-nanowire device with virtual source/drain (SD-VSD) for 3D NAND flash memory application;Yun;Solid-State Electron,2011

3. Yu B. Nanoelectronics: towards end of scaling and beyond. In: Int conf solid-state integr circ technol; 2006. p. 19–22.

4. Influence of discrete dopant on quantum transport in silicon nanowire transistors;Akhavan;Solid-State Electron,2012

5. Saraswat K.C. 3-D ICs: motivation, performance analysis, technology and applications. In: IEEE int symp phys fail anal integr circ; 2010. p. 1–6.

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1. Simulation of capacitorless DRAM based on polycrystalline silicon with a vertical underlap structure and a separated channel layer;Japanese Journal of Applied Physics;2024-03-01

2. Design of a Capacitorless DRAM Based on Storage Layer Separated Using Separation Oxide and Polycrystalline Silicon;Electronics;2022-10-18

3. Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped Structure;Nanomaterials;2022-10-09

4. 3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary’s influence;Scientific Reports;2022-08-24

5. A polycrystalline-silicon dual-gate MOSFET-based 1T-DRAM using grain boundary-induced variable resistance;Applied Physics Letters;2019-05-06

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