Electrical characteristics and simulations of self-switching-diodes in SOI technology

Author:

Farhi G.,Saracco E.,Beerens J.,Morris D.,Charlebois S.A.,Raskin J.-P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Unidirectional electron flow in a nanometer-scale semiconductor channel: a self-switching device;Song;Appl Phys Lett,2003

2. Diode-like characteristics of nanometer-scale semiconductor channels with a broken symmetry;Song;Physica E,2004

3. Åberg M, Saijets J. DC and AC characteristics and modeling of Si SSD-nano devices. In: Proceedings of the 2005 European conference on circuit theory and design, vol. I15; 2005, p. 01.

4. Simulation and modeling of self-switching devices;Åberg;Phys Scripta,2004

5. High-resolution focused ion beams;Orloff;Rev Sci Instrum,1993

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