Comment on “Negative Schottky barrier between titanium and n-type Si(001) for low-resistance ohmic contacts”
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. Negative Schottky barrier between titanium and n-type Si(001) for low-resistance ohmic contacts;Tao;Solid-State Electron,2004
2. Removal of dangling bonds and surface states on silicon (001) with a monolayer of selenium;Tao;Appl. Phys. Lett.,2003
3. Low Schottky barriers on n-type silicon (001);Tao;Appl. Phys. Lett.,2003
4. Flatband conditions observed for lanthanide-silicide monolayers on n-type Si(111);Vandré;Phys. Rev. Lett.,1999
5. Very low Schottky barrier to n-type silicon with PtEr-stack silicide;Tang;Solid-State Electron,2003
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