Low inversion equivalent oxide thickness and enhanced mobility in MOSFETs with chlorine plasma interface engineering-Reference-Cited by-同舟云学术

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Low inversion equivalent oxide thickness and enhanced mobility in MOSFETs with chlorine plasma interface engineering

Published:2014-11 Issue: Volume:101 Page:33-37
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Li Chen-Chien,Chang-Liao Kuei-Shu,Chen Li-Ting,Fu Chung-Hao,Hong Hao-Zhi,Li Mong-Chi,Chi Wei-Fong,Lu Chun-Chang,Ye Zong-Hao,Wang Tien-Ko

Funder

National Science Council of Taiwan, Republic of China (ROC)

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Dielectric Breakdown of $\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{HfO}_{2}$ Bi-Layer Gate Dielectric

2. A low gate leakage current and small equivalent oxide thickness MOSFET with Ti/HfO2 high-k gate dielectric

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Notable difference between rapid-thermal and microwave annealing on Ge pMOSFETs;Surface and Coatings Technology;2021-09

2. Electrical characteristics of Ge buried channel FinFETs with interfacial layers treated by F/N/H-based plasma;Microelectronic Engineering;2017-06

3. Fe–N-doped carbon-based composite as an efficient and durable electrocatalyst for the oxygen reduction reaction;RSC Advances;2016

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