1. Low field electron mobility in ultra-thin SOI MOSFETs: experimental characterization and theoretical investigation;Esseni;Solid-State Electron,2004
2. Vandooren A, Cristoloveanu S, Colinge JP. The dynamic conductance and transconductance in double-gate (gate-all-round) SOI devices, In: Proceedings of the IEEE international SOI conference; 2000. p. 118.
3. Gallon C, Fenouillet-Beranger, Meziani Y, Cesso JP, Lusakowski J, Teppe F. New magnetoresistance method for mobility extraction in scaled fully-depleted SOI devices. In: Proceedings of the IEEE international SOI conference; 2004. p. 153.
4. Differential magnetoresistance technique for mobility extraction in ultra-short channel FDSOI transistors;Chaisantikulwat;Solid-State Electron,2006
5. A review of the pseudo-mos transistor in soi wafers: operation parameter extraction, and applications;Cristoloveanu;IEEE Trans Electron Dev,2000