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RF performance of GaAs pHEMT switches with various upper/lower δ-doped ratio designs

  • Published:2009-02 Issue:2 Volume:53 Page:181-184
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Chiu Hsien-Chin,Fu Jeffrey S.,Chen Chung-Wen

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Super self-aligned GaAs RF switch IC with 0.25dB extremely low insertion loss for mobile communication systems;Makioka;IEEE Trans Electron Dev,2001

2. SPDT GaAs switches with copper metallized interconnects;Wu;IEEE Microwave Wireless Comput Lett,2007

3. 5mm high-power-density dual-delta-doped power HEMT’s for 3V L-band application;Lai;IEEE Electron Dev Lett,1996

4. A δ-doped InGaP/InGaAs pHEMT with different doping profiles for device-linearity improvement;Lin;IEEE Trans Electron Dev,2007

5. Lee KH, Koo KH. High linearity SPDT switch for dual band wireless LAN applications. In: Proc. IEEE APMC’05 Conf 2005. p. 4–7.

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