On the turn-around phenomenon in n-MOS transistors under NBTI conditions-Reference-Cited by-同舟云学术

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On the turn-around phenomenon in n-MOS transistors under NBTI conditions

Published:2016-07 Issue: Volume:121 Page:34-40
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Benabdelmoumene A.,Djezzar B.,Chenouf A.,Tahi H.,Zatout B.,Kechouane M.

Funder

National Funding of Research

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference40 articles.

1. Reliability implications of bias-temperature instability in digital ICs;Sang Phill Park;IEEE Des Test Comput,2009

2. Huard V. Two independent components modeling for negative bias temperature instability. In: Proc Int Rel Phys Symp; 2010. p. 33–42.

3. A comparative study of different physics-based NBTI models;Mahapatra;IEEE Trans Electron Dev,2013

4. Grasser T, Kaczer B, Goes W, Aichinger Th, Hehenberger P, Nelhiebel M. A two stage model for negative bias temperature instability. In: Proc Int Rel Phys Symp; 2009. p. 33–44.

5. Negative bias temperature instability (NBTI) recovery with bake;Katsetos;Microelectron Reliab,2008

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1. Degeneration Mechanism of 30 Mev and 100 Mev Proton Irradiation Effects on 1.2 Kv Sic Mosfets;2024

2. Time-dependent statistical NBTI model for aging assessment in circuit level implemented with open model interface;Microelectronics Reliability;2023-12

3. Study and Analysis of NBTI Effect on pMOSFET Using Fast Measurement Technique;Russian Microelectronics;2023-10

4. An Overview of the NBTI Phenomenon in MOS Devices;Russian Microelectronics;2023-10

5. Determination of Power MOSFET’s Gate Oxide Degradation Under Different Electrical Stress Levels Based on Stress-Induced Oxide Capacitance Changes;IEEE Transactions on Electron Devices;2021-02

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