Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference35 articles.
1. AlGaN/GaN HEMTs-an overview of device operation and applications;Mishra;Proc IEEE,2002
2. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs;Green;IEEE Electron Device Lett,2000
3. AlGaN/GaN HEMT with 300-GHz fmax;Chung;IEEE Electron Device Lett,2010
4. 300-GHz InAlN/GaN HEMTs with InGaN back barrier;Lee;IEEE Electron Device Lett,2011
5. N-polar GaN/InAlN/AlGaN MIS-HEMTs with 1.89S/mm extrinsic transconductance, 4A/mm drain current, 204GHz fT and 405GHz fmax;Denninghoff,2013
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