Investigation of hafnium-aluminate alloys in view of integration as interpoly dielectrics of future Flash memories

Author:

Molas Gabriel,Bocquet Marc,Buckley Julien,Grampeix Helen,Gély Marc,Colonna Jean-Philippe,Licitra Christophe,Rochat Névine,Veyront Thomas,Garros Xavier,Martin François,Brianceau Pierre,Vidal Vincent,Bongiorno Cosimo,Lombardo Salvatore,Salvo Barbara De,Deleonibus Simon

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Alessandri M, Piagge R, Alberici S, Bellandi E, Caniatti M, Ghidini G. High-k materials in Flash memories. In: Proceedings of the 208th ECS Meeting; 2005.

2. High-k materials for nonvolatile memory applications;Houdt;IRPS Tech Dig,2005

3. Technology for sub-50nm DRAM and NAND Flash manufacturing;Kim;IEDM Tech Dig,2005

4. Non-volatile memory technologies for beyond 2010;Shin;VLSI Circuit Tech Dig,2005

5. Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large DVth and good retention;Lai;VLSI Tech Dig,2005

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