A toggle MRAM bit modeled in Verilog-A

Author:

Engelbrecht Linda M.,Jander Albrecht,Dhagat Pallavi,Hall Michael

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Tehrani S. In: IEEE international electron devices meeting 2006 (IEDM ‘06) IEEE, San Fransisco, CA; 2006. p. 548–51.

2. Generalization of a two-dimensional micromagnetic model to nonuniform thickness;Porter;J Appl Phys,2001

3. Micromagnetic modelling – the current state of the art;Fidler;J Phys D: Appl Phys,2000

4. Low-power and high-sensitivity magnetoresistive random access memory sensing scheme with body-biased preamplifier;Sugimura;Jpn J Appl Phys,2006

5. Faber L-B, Zhao W, Klein J-O, Devolder T, Chappert C. In: IEEE 4th international design and technology of integrated systems in nanoscale era 2009 (DTIS ‘09); 2009. p. 130–5.

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Random Pattern Generation and Redundancy Analysis in Memories;2022 IEEE 11th International Conference on Communication Systems and Network Technologies (CSNT);2022-04-23

2. Transistor-Less Spin Torque Transfer Magnetic Random Access Memory Cell Design;IEEE Transactions on Magnetics;2015-11

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