Scale changes in electronics: Implications for nanostructure devices for logic and memory and beyond-Reference-Cited by-同舟云学术

Scale changes in electronics: Implications for nanostructure devices for logic and memory and beyond

Published:2013-06 Issue: Volume:84 Page:2-12
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Kim Jaeyoon,Lee Sanghyeon,Rubin J.,Kim Moonkyung,Tiwari Sandip

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. More Is Different

2. A re-examination of models of superparamagnetic relaxation

3. Introduction to VLSI systems;Mead,1990

4. This is the corollary of Maxwell’s Demon. For a discussion of this penalty, see Kumar A, Tiwari S. Testing and defect tolerance: a rent’s rule based analysis and implications on nanoelectronics. In: Proc. of IEEE international symposium on defect and fault tolerance in VLSI systems, October, 280–288; 2004.

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