On the electron mobility enhancement in biaxially strained Si MOSFETs

Author:

Driussi F.,Esseni D.,Selmi L.,Hellström P.-E.,Malm G.,Ha˚llstedt J.,Östling M.,Grasby T.J.,Leadley D.R.,Mescot X.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Strained-Si heterostructure field effect transistor;Maiti;Semicond Sci Technol,1998

2. Comparative study of phonon-limited mobility of two dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field-effect-transistor;Takagi;J Appl Phys,1996

3. Strain dependence of the performance enhancement in strained-Si n-MOSFETs;Welser;IEDM Tech Digest,1994

4. Fabrication and analysis of deep submicron strained-Si N-MOSFET’s;Rim;IEEE Tran Electron Dev,2000

5. Characteristics and device design of sub-100nm strained Si N- and PMOSFETs;Rim;Digest VLSI Symp,2002

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