An efficient method for evaluating RRAM crossbar array performance

Author:

Song Lin,Zhang Jinyu,Chen An,Wu Huaqiang,Qian He,Yu Zhiping

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Metal–oxide RRAM;Wong;Proc IEEE,2012

2. Floke A, Noll TG. Fundamental analysis of resistive nano-crossbars for the use in hybrid nano/CMOS-memory. In: European solid state circuits conference; 2007. p. 328–31.

3. Kim S, et al. Performance of threshold switching in chalcogenide glass for 3D stackable selector. In: IEEE symposium on VLSI technology and circuits, vol. 6; 2013.

4. Lee W. Varistor-type bidirectional switch (JMAX>107 A/cm2, selectivity~104) for 3D bipolar resistive memory arrays. In: IEEE symposium on VLSI technology and circuits, vol. 1; 2012. p. 2011–2.

5. TiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application;Shin;J Appl Phys,2011

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