Author:
Weber A.,Birner A.,Krautschneider W.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. A 0.6μm2 256Mb Trench DRAM cell with self-aligned BurieEd STrap (BEST);Nesbit;IEDM Tech Dig,1993
2. On the retention time of dynamic random access memory (DRAM);Hamamoto;IEEE Trans Electron Dev,1998
3. Theoretical study of deep-trap-assisted anomalous currents in worst-bit cells of dynamic random access memories (DRAM’s);Yamaguchi;IEEE Trans Electron Dev,2000
4. Impact of gate-induced drain leakage current on the tail distribution of DRAM data retention time;Saino;IEDM Tech Dig,2000
5. Off-state current model for tail mode retention time distribution of 256Mb DRAM cell with negative wordline bias;Yi;J Korean Phys Soc,2004
Cited by
11 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献