Analytical model of single-gate silicon-on-insulator (SOI) tunneling field-effect transistors (TFETs)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60mV/dec;Choi;IEEE Electron Dev Lett,2007
2. Low subthreshold-swing tunnel transistors;Zhang;IEEE Electron Dev Lett,2006
3. The tunnel source (PNPN) n-MOSFET: a novel high performance transistor;Nagavarapu;IEEE Trans Electron Dev,2008
4. Tunnel field effect transistor with raised germanium source;Kim;IEEE Trans Electron Dev,2010
5. Hetero-gate-dielectric tunneling field-effect transistors;Choi;IEEE Trans Electron Dev,2010
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