Comprehensive study of the statistical variability in a 22nm fully depleted ultra-thin-body SOI MOSFET

Author:

Mohd Zain Anis Suhaila,Markov Stanislav,Cheng Binjie,Asenov Asen

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Declerk G. A look into the future of nanoelectronics. VLSI Technology, Digest of Technical Papers; 2005. p. 6–10.

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3. Fluctuation limits and scaling opportunities for CMOS SRAM cells;Bhavnagarwala;IEDM Tech Dig,2005

4. Statistical threshold voltage variability in scaled decananometer bulk HKMG MOSFETs: a full scale 3-D simulation scaling study;Wang;IEEE Trans Electron Dev,2011

5. Quantitative evaluation of statistical variability sources in a 45nm technological node LP N-MOSFET;Cathignol;IEEE Electron Dev Lett,2008

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