Modeling the threshold voltage variation induced by channel random dopant fluctuation in fully depleted silicon-on-insulator MOSFETs-Reference-Cited by-同舟云学术

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Modeling the threshold voltage variation induced by channel random dopant fluctuation in fully depleted silicon-on-insulator MOSFETs

Published:2018-09-11 Issue:10 Volume:57 Page:104201
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Zhang Guohe,Yang Jiangjiang,Jiang Peilin,Bu Jianhui,Li Binhong,Li Bo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=10/a=104201/pdf

Reference24 articles.

1. The effect of randomness in the distribution of impurity atoms on FET thresholds

2. Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's

3. Modeling statistical dopant fluctuations in MOS transistors

4. Statistical variability in scaled generations of n-channel UTB-FD-SOI MOSFETs under the influence of RDF, LER, OTF and MGG

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