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A physics-based compact model of phase change for the design of cross-point storage-class memories

  • Published:2021-11 Issue: Volume:185 Page:107955
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Kim Donguk,Tae Jang Jun,Myong Kim Dong,Choi Sung-Jin,Ban Sanghyun,Shin Minchul,Lee Hanwool,Dong Lee Hyung,Mo Hyun-Sun,Hwan Kim Dae

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Technology Scaling Challenges and Opportunities of Memory Devices;Lee;IEDM Tech Dig,2017111

2. Phase-change memory—Towards a storage-class memory;Fong;IEEE Trans. Electron Devices,2017

3. Overview of candidate device technologies for storage-class memory;Burr;IBM J Res Dev,2008

4. Excellent data retention characteristic of Te-based conductive-bridge RAM using semiconducting Te filament for storage class memory Sangmin;Lee;Solid-State Electron,2019

5. Evolution of Phase-Change Memory for the Storage-Class Memory and beyond;Kim;IEEE Trans Electron Devices,2020

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