High-performance 2mm gate width GaN HEMTs on 6H-SiC with output power of 22.4W@8GHz-Reference-Cited by-同舟云学术

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High-performance 2mm gate width GaN HEMTs on 6H-SiC with output power of 22.4W@8GHz

Published:2008-06 Issue:6 Volume:52 Page:926-929
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Wang X.L.,Chen T.S.,Xiao H.L.,Wang C.M.,Hu G.X.,Luo W.J.,Tang J.,Guo L.C.,Li J.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. 30-W/mm GaN HEMTs by Field Plate Optimization

2. Improved Power Performance for a Recessed-Gate AlGaN–GaN Heterojunction FET With a Field-Modulating Plate

3. Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AlN/GaN heterostructures grown on sapphire substrates by MOCVD

4. 2.1A/mm current density AlGaN/GaN HEMT;Chini;Electron Lett,2003

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1. An Analytic Model for the 2-DEG Density Current-Voltage Characteristic for AlGaN/GaN HEMTs;International Journal of Engineering Research in Africa;2024-07-25

2. Effect of nitrogen gas flow and growth temperature on extension of GaN layer on Si*;Chinese Physics B;2021-12-01

3. Fabrication and characterization of AlGaN/GaN HEMTs with high power gain and efficiency at 8 GHz;Journal of Semiconductors;2021-12-01

4. Analytical Model of β-Ga2O3 MESFET for Transconductance Optimization;2021 6th International Conference for Convergence in Technology (I2CT);2021-04-02

5. Effects of notch structures on DC and RF performances of AlGaN/GaN high electron mobility transistors*;Chinese Physics B;2021-04-01

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