1. Shang H, Okorn-Schmidt H, Chan KK, Copel M, Ott JA, Kozlowski PM, et al. High-mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric. In: Proceedings of the intternational electron devices meeting (IEDM); 2002. p. 441–4.
2. Atomic layer deposition of hafnium oxide on germanium substrates;Delabie;J Appl Phys,2005
3. Germanium deep-submicron PMOS transistors with etched TaN metal gate on a high-k dielectric, fabricated in a 200mm prototyping line;Meuris,2004
4. Jones RE, Thomas SG, Bharatan S, Thoma R, Jasper C, Zirkle T, et al. Fabrication and modeling of gigahertz photodetectors in heteroepitaxial Ge-on-Si using a graded buffer layer deposition by low energy plasma enhanced CVD. In: Proceedings of the international electron devices meeting (IEDM); 2002. p. 793–6.
5. Ge on Si PIN-photodiodes operating at 10Gb/s;Colace;J Appl Phys,2006