Post drain-stress behavior of AlGaN/GaN-on-Si MIS-HEMTs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Gallium nitride devices for power electronic applications;Baliga;Semicond Sci Technol,2013
2. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures;Ambacher;J Appl Phys,2000
3. Trapping and reliability assessment in D-mode GaN-based MIS-HEMTs for power applications;Meneghini;IEEE Trans Power Electron,2014
4. Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si(111) substrate with very thin SiO2 gate dielectric;Lachab;Semicond Sci Technol,2012
5. Trapping and high field related issues in GaN power HEMTs;Meneghesso,2014
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