Influence of interface traps position along channel in the low-frequency noise of junctionless nanowire transistors-Reference-Cited by-同舟云学术

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Influence of interface traps position along channel in the low-frequency noise of junctionless nanowire transistors

Published:2024-02 Issue: Volume:212 Page:108835
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Doria Rodrigo T.^ORCID,Picoli Junior Marcos P.,Barraud Sylvain,Trevisoli Renan

Funder

Fundação de Amparo à Pesquisa do Estado de São Paulo

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior

Conselho Nacional de Desenvolvimento Científico e Tecnológico

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Nanowire transistors without junctions;Colinge;Nat Nanotechnol,2010

2. R. Trevisoli, R.T. Doria, M. de Souza, M.A. Pavanello, “Lateral spacers influence on the effective channel length of junctionless nanowire transistors,” In: 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2017, pp. 1-3.

3. S. Sahay, M.J. Kumar, Junctionless Field-Effect Transistors: Design, Modeling, and Simulation, John Wiley & Sons, 419p., New York, 2019.

4. J.-P. Colinge, C.W. Lee, N.D. Akhavan, R. Yan, I. Ferain, P. Razavi, A. Kranti, R. Yu, Junctionless transistors: physics and properties. In: Semiconductor-on-insulator materials for nanoelectronics applications. Springer, pp 187–200, 2011.

5. Superiority of core–shell junctionless FETs;Cristoloveanu;Solid State Electron,2022

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