Advanced memory concepts for DRAM and nonvolatile memories-Reference-Cited by-同舟云学术

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Advanced memory concepts for DRAM and nonvolatile memories

Published:2006-04 Issue:4 Volume:50 Page:545-550
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Horiguchi Fumio

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. New effects of trench isolated transistor using side-wall gates;Hieda;IEDM Tech Dig,1987

2. FinFET-a self-aligned double-gate MOSFET scalable to 20nm;Hisamoto;IEEE Trans Electron Dev,2000

3. Fin-array-FET on bulk silicon for sub-100nm trench capacitor DRAM;Katsumata;VLSI Tech Dig,2003

4. Enhanced data retention of damascene-fin FET DRAM with local channel implantation and 〈100〉 fin surface orientation engineering;Lee;IEDM Tech Dig,2004

5. A surrounding gate transistor (SGT) cell for 64/256Mbit DRAMs;Sunouchi;IEDM Tech Dig,1989

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Presence of capacitive memory in indium doped TiO2 alloy thin film;Journal of Alloys and Compounds;2016-01

2. Memory Devices;Lecture Notes in Electrical Engineering;2013

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