Memory Devices
Publisher
Springer Berlin Heidelberg
Reference239 articles.
1. Freitas, R.F., Wilcke, W.W.: Storage-class memory: the next storage system technology. IBM J. Res. & Dev. 52(4-5), 439–447 (2008) 2. Burr, G.W., Kurdi, B.N., Scott, J.C., Lam, C.H., Gopalakrishnan, K., Shenoy, R.S.: Overview of candidate device technologies for storage-class memory. IBM J. Res. & Dev. 52(4-5), 449–464 (2008) 3. Kang, U., Chung, H.-J., Heo, S., Ahn, S.-H., Lee, H., Cha, S.-H., Ahn, J., Kwon, D.M., Kim, J.H., Lee, J.-W., Joo, H.-S., Kim, W.-S., Kim, H.-K., Lee, E.-M., Kim, S.-R., Ma, K.-H., Jang, D.-H., Kim, N.-S., Choi, M.-S., Oh, S.-J., Lee, J.-B., Jung, T.-K., Yoo, J.-H., Kim, C.: 8Gb 3D DDR3 DRAM using through-silicon-via technology. In: IEEE Int. Solid-State Circuits Conf. Tech. Dig. (ISSCC), pp. 130–132 (2009) 4. Trinh, C., Shibata, N., Nakano, T., Ogawa, M., Sato, J., Takeyama, Y., Isobe, K., Le, B., Moogat, F., Mokhlesi, N., Kozakai, K., Hong, P., Kamei, T., Iwasa, K., Nakai, J., Shimizu, T., Honma, M., Sakai, S., Kawaai, T., Hoshi, S., Yuh, J., Hsu, C., Tseng, T., Li, J., Hu, J., Liu, M., Khalid, S., Chen, J., Watanabe, M., Lin, H., Yang, J., McKay, K., Nguyen, K., Pham, T., Matsuda, Y., Nakamura, K., Kanebako, K., Yoshikawa, S., Igarashi, W., Inoue, A., Takahashi, T., Komatsu, Y., Suzuki, C., Kanazawa, K., Higashitani, M., Lee, S., Murai, T., Nguyen, K., Lan, J., Huynh, S., Murin, M., Shlick, M., Lasser, M., Cernea, R., Mofidi, M., Schuegraf, K., Quader, K.: A 5.6MB/s 64Gb 4b/cell NAND Flash memory in 43nm CMOS. In: IEEE Int. Solid-State Circuits Conf. Tech. Dig. (ISSCC), pp. 446–448 (2009) 5. Takeuchi, K., Lu, N.C.C.: Session 24 overview: DRAM & Flash memories. In: IEEE Int. Solid-State Circuits Conf. Tech. Dig. (ISSCC), pp. 432–433 (2010)
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