A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs-Reference-Cited by-同舟云学术

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A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs

Published:2004-10 Issue:10-11 Volume:48 Page:2047-2050
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Suligoj Tomislav,Liu Haitao,Sin Johnny K.O.,Tsui Kenneth,Chu Rongming,Chen Kevin J.,Biljanovic Petar,Wang Kang L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. A novel lateral bipolar transistor with 67 GHz f/sub max/ on thin-film SOI for RF analog applications

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design considerations for integration of Horizontal Current Bipolar Transistor (HCBT) with 0.18μm bulk CMOS technology;Solid-State Electronics;2010-10

2. Horizontal Current Bipolar Transistor (HCBT) Process Variations for Future RF BiCMOS Applications;IEEE Transactions on Electron Devices;2005-07

3. A Novel Isolation of Pillarlike Structures by CMP and Etchback Processes;Electrochemical and Solid-State Letters;2005-05-01

4. A new HCBT with a partially etched collector;IEEE Electron Device Letters;2005-03

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