Design considerations for integration of Horizontal Current Bipolar Transistor (HCBT) with 0.18μm bulk CMOS technology-Reference-Cited by-同舟云学术

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Design considerations for integration of Horizontal Current Bipolar Transistor (HCBT) with 0.18μm bulk CMOS technology

Published:2010-10 Issue:10 Volume:54 Page:1166-1172
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Koričić Marko,Suligoj Tomislav,Mochizuki Hidenori,Morita So-ichi,Shinomura Katsumi,Imai Hisaya

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Device and Technology Evolution for Si-Based RF Integrated Circuits

2. A new HCBT with a partially etched collector

3. A novel lateral bipolar transistor with 67 GHz f/sub max/ on thin-film SOI for RF analog applications

4. Lateral High-Speed Bipolar Transistors on SOI for RF SoC Applications

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Horizontal current bipolar transistor (HCBT) - a low-cost, high-performance flexible BiCMOS technology for RF communication applications;Facta universitatis - series: Electronics and Energetics;2015

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