Junction temperature in n-ZnO nanorods/(p-4H–SiC, p-GaN, and p-Si) heterojunction light emitting diodes-Reference-Cited by-同舟云学术

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Junction temperature in n-ZnO nanorods/(p-4H–SiC, p-GaN, and p-Si) heterojunction light emitting diodes

Published:2010-05 Issue:5 Volume:54 Page:536-540
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Alvi N.H.,Riaz M.,Tzamalis G.,Nur O.,Willander M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Optically pumped lasing of ZnO at room temperature

2. ZnO as a novel photonic material for the UV region

3. Transmission Spectra of ZnO Single Crystals

4. A comprehensive review of ZnO materials and devices

5. Current transport studies of ZnO∕p-Si heterostructures grown by plasma immersion ion implantation and deposition

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1. Demonstration of an n-ZnO/p-Si/n-Si heterojunction bipolar phototransistor for X-ray detection;Solid-State Electronics;2022-02

2. Electrical transport properties and impedance analysis of Au/ZnO nanorods/ITO heterojunction device;Nano Express;2020-11-16

3. Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode;Advances in Condensed Matter Physics;2020-04-13

4. Fabrication of Heterojunction Diode Based on n-ZnO Nanowires/p-Si Substrate: Temperature Dependent Transport Characteristics;Journal of Nanoscience and Nanotechnology;2017-01-01

5. Flexible Textile Strain Wireless Sensor Functionalized with Hybrid Carbon Nanomaterials Supported ZnO Nanowires with Controlled Aspect Ratio;Advanced Functional Materials;2016-07-01

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